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Japanese Scientists Invent Durable Flash Memory Which Can Last 100+ Years

DailyTech – Japanese Scientists Invent Durable Flash Memory Which Can Last 100+ Years


The Japanese scientists state that their new ferroelectric NAND flash cells can scale much smaller, to a scant 10 nm.  The scientists claim that the new cells can be rewritten 100 million times, as opposed to current flash, which can only support about 10,000 writes.

To further prolong the cell life, they employ a wear-leveling technology, in which all cells are used equally, and overused cells are “retired”.  The end result is lifetimes of 100+ years.  Additionally, the new ferroelectric cells operate at 6 volts or less.  Current flash cells use 20 V, meaning that the new cells will likely cut power consumption by as much as a factor of 3.

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