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100x Sensitivity Image Sensor Based on Solar-cell Structure (JAPAN)

April 26th, 2008 Leave a comment Go to comments

Source: http://techon.nikkeibp.co.jp/english/NEWS_EN/20080418/150688/

 

Rohm Co Ltd and the Research Center for Photovoltaics of the National Institute of Advanced Industrial Science and Technology (AIST) have announced that they have succeeded in prototyping a CIGS (Cu-In-Ga-Se) image sensor that has approximately 100 times the sensitivity of CCD, CMOS and other Si-based image sensors.

They have confirmed that their sensor can recognize images in environments as dark as 0.001lx, which is difficult for existing Si image sensors, they said. As the new image sensor can also recognize images with light in the near infrared zone, expected applications include automotive cameras, monitoring cameras, iris and vein authentication, which must support image sensing under lighting conditions ranging from bright to dark.

 

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